Analysis of Gain Saturation Behavior in GaN Based Quantum Well Lasers
نویسندگان
چکیده
منابع مشابه
Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb/GaAs quantum well lasers
GaAsSb/GaAs quantum well QW lasers grown by solid source molecular beam epitaxy are fabricated into ridge lasers and tested. These devices have a lasing wavelength around 1.2 m that is substantially blueshifted relative to the electroluminescence peak. The magnitude of the blueshift increases as the cavity length is shortened, indicating that the blueshift increases with injection level. This b...
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ژورنال
عنوان ژورنال: physica status solidi (c)
سال: 2003
ISSN: 1610-1634,1610-1642
DOI: 10.1002/pssc.200390083